UG30APT thru ug30dpt vishay general semiconductor document number: 88762 revision: 05-jun-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual common-cathode ultrafast plastic rectifier features ? glass passivated chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? low forward voltage drop ? high forward surge capability ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. mechanical data case: to-247ad (to-3p) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 30 a v rrm 50 v to 200 v i fsm 300 a t rr 25 ns v f 0.85 v t j max. 150 c pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol UG30APT ug30bpt ug30cpt ug30dpt unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at t c = 120 c i f(av) 30 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 300 a operating and storage temperature range t j , t stg - 65 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol UG30APT ug30bpt ug30cpt ug30dpt unit maximum instantaneous forward voltage per diode 15 a 30 a 10 a t j = 100 c v f 1.0 1.15 0.85 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 100 c i r 15 800 a www.datasheet.co.kr datasheet pdf - http://www..net/
UG30APT thru ug30dpt vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88762 revision: 05-jun-08 2 note: (1) thermal resistance from junction to case per diode mounted on heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 25 ns maximum reverse recovery time i f = 15 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t j = 100 c t rr 35 50 ns maximum recovered stored charge i f = 15 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t j = 100 c q rr 22 50 nc typical junction capacitance 4.0 v, 1 mhz c j 70 pf electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol UG30APT ug30bpt ug30cpt ug30dpt unit thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol UG30APT ug30bpt ug30cpt ug30dpt unit typical thermal resistance per diode (1) r jc 2.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-247ad ug30dpt-e3/45 6.15 30 30/tube tube figure 1. maximum forward current derating curve 0 25 50 75 100 125 150 175 0 6 12 1 8 24 30 36 a v erage for w ard rectified c u rrent (a) case temperat u re (c) resisti v e or ind u cti v e load figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 10 100 1000 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t c = 120 c 8 .3 ms single half sine- w a v e www.datasheet.co.kr datasheet pdf - http://www..net/
UG30APT thru ug30dpt vishay general semiconductor document number: 88762 revision: 05-jun-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1 10 100 1000 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) t j = 100 c t j = 25 c figure 5. reverse switching characteristics per diode figure 6. typical juncti on capacitance per diode 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 j u nction temperat u re (c) i f = 15 a v r = 30 v di/dt = 100 a/ s di/dt = 50 a/ s di/dt = 100 a/ s di/dt = 150 a/ s di/dt = 50 a/ s di/dt = 20 a/ s di/dt = 150 a/ s di/dt = 20 a/ s reco v ered store change/re v erse reco v ery time (nc/ns) 0.1 1 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 125 c f = 1.0 mhz v sig = 50 m v p-p pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 ( 8 .2) 0.313 (7.9) 0.142 (3.6) 0.13 8 (3.5) 0.170 (4.3) 0.0 8 6(2.1 8 ) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.04 8 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0. 8 40 (21.3) 0. 8 20 (20. 8 ) 1 2 3 0.07 8 (1.9 8 ) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.11 8 (3.0) 0.10 8 (2.7) www.datasheet.co.kr datasheet pdf - http://www..net/
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